- Packaging :
- Mounting Type :
- Supplier Device Package :
- Diode Type :
- Current - Average Rectified (Io) :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
- Applied Filters :
24 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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34,560
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | DIODE GEN PURP 650V 40A TO220-2 | - | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2-1 | Standard | 40A (DC) | 2.2V @ 20A | 40µA @ 650V | 650V | Fast Recovery = 200mA (Io) | 32ns | -40°C ~ 175°C | - | |||
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GET PRICE |
16,180
One step to sell excess stocks.Or submit Qty to get quotes
|
STMicroelectronics | DIODE SCHOTTKY 650V 4A DPAK | - | Active | Digi-Reel® | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | Silicon Carbide Schottky | 4A | 1.75V @ 4A | 40µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -40°C ~ 175°C | 200pF @ 0V, 1MHz | ||
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GET PRICE |
57,320
One step to sell excess stocks.Or submit Qty to get quotes
|
STMicroelectronics | DIODE SCHOTTKY 650V 4A DPAK | - | Active | Cut Tape (CT) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | Silicon Carbide Schottky | 4A | 1.75V @ 4A | 40µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -40°C ~ 175°C | 200pF @ 0V, 1MHz | ||
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77,060
One step to sell excess stocks.Or submit Qty to get quotes
|
STMicroelectronics | DIODE SCHOTTKY 650V 4A DPAK | - | Active | Tape & Reel (TR) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | Silicon Carbide Schottky | 4A | 1.75V @ 4A | 40µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -40°C ~ 175°C | 200pF @ 0V, 1MHz | |||
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56,160
One step to sell excess stocks.Or submit Qty to get quotes
|
STMicroelectronics | DIODE SCHOTTKY 650V 4A TO220AC | - | Active | Tube | Through Hole | TO-220-2 Insulated, TO-220AC | TO-220AC ins | Schottky | 4A | 1.75V @ 4A | 40µA @ 650V | 650V | Fast Recovery = 200mA (Io) | - | -40°C ~ 175°C | - | |||
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59,560
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | DIODE GEN PURP 650V 30A TO220-2 | - | Active | Tube | Through Hole | TO-220-2 Full Pack | PG-TO220-2 Full Pack | Standard | 30A (DC) | 2.2V @ 30A | 40µA @ 650V | 650V | Fast Recovery = 200mA (Io) | 42ns | -40°C ~ 175°C | - | |||
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29,680
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | DIODE GEN PURP 650V 8A TO220-2 | - | Active | Tube | Through Hole | TO-220-2 | TO-220-2 | Standard | 8A | 2.3V @ 8A | 40µA @ 650V | 650V | Fast Recovery = 200mA (Io) | 40ns | -40°C ~ 175°C | - | |||
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48,240
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | DIODE GEN PURP 650V 60A TO220-2 | - | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2-1 | Standard | 60A (DC) | 2.2V @ 30A | 40µA @ 650V | 650V | Fast Recovery = 200mA (Io) | 42ns | -40°C ~ 175°C | - | |||
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37,520
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | DIODE GEN PURP 650V 8A TO220-2 | - | Active | Tube | Through Hole | TO-220-2 | TO-220-2 | Standard | 8A | 1.7V @ 8A | 40µA @ 650V | 650V | Fast Recovery = 200mA (Io) | 80ns | -40°C ~ 175°C | - | |||
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73,620
One step to sell excess stocks.Or submit Qty to get quotes
|
Rohm Semiconductor | DIODE SC SCHKY 650V 8A TO220ACP | - | Active | Tube | Through Hole | TO-220-2 | - | Silicon Carbide Schottky | 8A (DC) | 1.5V @ 8A | 40µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 400pF @ 1V, 1MHz | |||
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54,840
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | DIODE GEN PURP 650V 80A TO247-3 | - | Active | Tube | Through Hole | TO-247-3 | TO-247-3 | Standard | 80A | 1.7V @ 40A | 40µA @ 650V | 650V | Fast Recovery = 200mA (Io) | 129ns | -40°C ~ 175°C | - | |||
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33,300
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | DIODE GEN PURP 650V 28A TO220-2 | - | Active | Tube | Through Hole | TO-220-2 Full Pack | PG-TO220-2 Full Pack | Standard | 28A (DC) | 1.7V @ 20A | 40µA @ 650V | 650V | Fast Recovery = 200mA (Io) | 42ns | -40°C ~ 175°C | - | |||
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51,620
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | DIODE GEN PURP 650V 15A TO220-2 | - | Active | Tube | Through Hole | TO-220-2 | TO-220-2 | Standard | 15A | 2.2V @ 15A | 40µA @ 650V | 650V | Fast Recovery = 200mA (Io) | 47ns | -40°C ~ 175°C | - | |||
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16,940
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | DIODE GEN PURP 650V 15A TO220-2 | - | Active | Tube | Through Hole | TO-220-2 | TO-220-2 | Standard | 15A | 1.7V @ 15A | 40µA @ 650V | 650V | Fast Recovery = 200mA (Io) | 114ns | -40°C ~ 175°C | - | |||
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47,660
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | DIODE GEN PURP 650V 8A TO220-2 | - | Active | Tube | Through Hole | TO-220-2 | TO-220-2 | Standard | 8A | 2.3V @ 3A | 40µA @ 650V | 650V | Fast Recovery = 200mA (Io) | 40ns | -40°C ~ 175°C | - | |||
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69,560
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | DIODE GEN PURP 650V 80A TO247-3 | - | Active | Tube | Through Hole | TO-247-3 | TO-247-3 | Standard | 80A | 2.3V @ 40A | 40µA @ 650V | 650V | Fast Recovery = 200mA (Io) | 75ns | -40°C ~ 175°C | - | |||
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33,580
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | DIODE GEN PURP 650V 40A TO220-2 | - | Active | Tube | Through Hole | TO-220-2 | TO-220-2 | Standard | 40A | 2.3V @ 40A | 40µA @ 650V | 650V | Fast Recovery = 200mA (Io) | 75ns | -40°C ~ 175°C | - | |||
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75,160
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | DIODE GEN PURP 650V 30A TO247-3 | - | Active | Tube | Through Hole | TO-247-3 | PG-TO247-3 | Standard | 30A | 2.3V @ 15A | 40µA @ 650V | 650V | Fast Recovery = 200mA (Io) | 47ns | -40°C ~ 175°C | - | |||
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70,560
One step to sell excess stocks.Or submit Qty to get quotes
|
STMicroelectronics | DIODE SCHOTTKY 650V 4A TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 4A | 1.75V @ 4A | 40µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -40°C ~ 175°C | 200pF @ 0V, 1MHz | |||
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34,840
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | IGBT 650V 40A TO247-3 | - | Active | - | Through Hole | TO-247-3 | PG-TO247-3-AL | Standard | 42A (DC) | 2.1V @ 40A | 40µA @ 650V | 650V | Fast Recovery = 200mA (Io) | 76ns | -40°C ~ 175°C | - | |||
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23,780
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | DIODE GEN PURP 650V 60A TO247-3 | - | Active | Tube | Through Hole | TO-247-3 | TO-247-3 | Standard | 60A | 1.7V @ 30A | 40µA @ 650V | 650V | Fast Recovery = 200mA (Io) | 115ns | -40°C ~ 175°C | - | |||
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46,520
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | DIODE GEN PURP 650V 15A TO220 | - | Active | Tube | Through Hole | TO-220-2 | TO-220 | Standard | 15A | 2.3V @ 15A | 40µA @ 650V | 650V | Fast Recovery = 200mA (Io) | 47ns | -40°C ~ 175°C | - | |||
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78,020
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | DIODE GEN PURP 650V 150A TO247-3 | - | Active | Tube | Through Hole | TO-247-3 | PG-TO247-3 | Standard | 150A (DC) | 1.7V @ 75A | 40µA @ 650V | 650V | Fast Recovery = 200mA (Io) | 108ns | -40°C ~ 175°C | - | |||
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48,700
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | DIODE GEN PURP 650V 60A TO220-2 | - | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2-1 | Standard | 60A (DC) | 1.7V @ 30A | 40µA @ 650V | 650V | Fast Recovery = 200mA (Io) | 64ns | -40°C ~ 175°C | - |
