- Series :
- Mounting Type :
- Package / Case :
- FET Feature :
- Drain to Source Voltage (Vdss) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Filtri applicati :
4 prodotti
| IMMAGINE | PARTE N. | PREZZO | QUANTITÀ | AZIONE | PRODUZIONE | DESCRIZIONE | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
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31,120
Spedisce oggi + trasporto libero durante la notte
|
ON Semiconductor | MOSFET 6N-CH 40V 150A MODULE | SPM® | Active | Tube | 175°C (TJ) | Through Hole | 19-PowerDIP Module | 115W | 6 N-Channel (3-Phase Bridge) | Logic Level Gate | 40V | 150A | 1.66 mOhm @ 80A, 10V | - | - | - | |||
|
|
79,380
Spedisce oggi + trasporto libero durante la notte
|
Cree/Wolfspeed | MOSFET 2N-CH 1200V 444A MODULE | Z-REC™ | Active | Bulk | 175°C (TJ) | - | Module | 3000W | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 444A (Tc) | 4.3 mOhm @ 400A, 20V | 4V @ 105mA | 1127nC @ 20V | - | |||
|
|
38,720
Spedisce oggi + trasporto libero durante la notte
|
Rohm Semiconductor | SIC POWER MODULE | - | Active | Bulk | 175°C (TJ) | Surface Mount | Module | 880W | 2 N-Channel (Dual) | Standard | 1200V (1.2kV) | - | - | 5.6V @ 50mA | - | 900pF @ 10V | |||
|
|
17,160
Spedisce oggi + trasporto libero durante la notte
|
Rohm Semiconductor | SIC POWER MODULE-1200V-80A | - | Active | Tray | 175°C (TJ) | Chassis Mount | Module | 600W | 2 N-Channel (Dual) | Standard | 1200V (1.2kV) | 80A | - | 4V @ 13.2mA | - | 800pF @ 10V |
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