- Produzione :
- Operating Temperature :
- Package / Case :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Filtri applicati :
2 prodotti
| IMMAGINE | PARTE N. | PREZZO | QUANTITÀ | AZIONE | PRODUZIONE | DESCRIZIONE | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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25,180
Spedisce oggi + trasporto libero durante la notte
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Microsemi Corporation | MOSFET 2N-CH 1200V 143A SP1 | - | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | 600W | 2 N Channel (Phase Leg) | Standard | 1200V (1.2kV) | 143A | 17 mOhm @ 100A, 20V | 2.3V @ 2mA (Typ) | 360nC @ 20V | 5960pF @ 1000V | |||
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17,160
Spedisce oggi + trasporto libero durante la notte
|
Rohm Semiconductor | SIC POWER MODULE-1200V-80A | - | Active | Tray | 175°C (TJ) | Chassis Mount | Module | 600W | 2 N-Channel (Dual) | Standard | 1200V (1.2kV) | 80A | - | 4V @ 13.2mA | - | 800pF @ 10V |
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