- Package / Case :
- FET Feature :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
2 prodotti
IMMAGINE | PARTE N. | PREZZO | QUANTITÀ | AZIONE | PRODUZIONE | DESCRIZIONE | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
77,800
Spedisce oggi + trasporto libero durante la notte
|
Microsemi Corporation | POWER MODULE - SIC MOSFET | - | Active | - | -40°C ~ 175°C (TJ) | Chassis Mount | Module | 375W | SP3 | 6 N-Channel (3-Phase Bridge) | Standard | 1200V (1.2kV) | 74A (Tc) | 34 mOhm @ 50A, 20V | 4V @ 15mA | 161nC @ 5V | 2788pF @ 1000V | ||||
|
68,520
Spedisce oggi + trasporto libero durante la notte
|
Microsemi Corporation | POWER MODULE - SIC | - | Active | Bulk | -40°C ~ 175°C (TJ) | Chassis Mount | SP1 | 470W | SP1 | 2 N-Channel (Dual), Schottky | Silicon Carbide (SiC) | 1200V (1.2kV) | 74A (Tc) | 50 mOhm @ 40A, 20V | 3V @ 2mA | 272nC @ 20V | 5120pF @ 1000V |
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