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4 prodotti
| IMMAGINE | PARTE N. | PREZZO | QUANTITÀ | AZIONE | PRODUZIONE | DESCRIZIONE | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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ASSICURATI QUOTE |
77,780
Spedisce oggi + trasporto libero durante la notte
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Infineon Technologies | MOSFET 2N-CH 60V 8A 8-SOIC | HEXFET® | Active | Digi-Reel® | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 60V | 8A | 17.8 mOhm @ 8A, 10V | 4V @ 50µA | 36nC @ 10V | 1330pF @ 30V | ||
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22,820
Spedisce oggi + trasporto libero durante la notte
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Infineon Technologies | MOSFET 2N-CH 60V 8A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 60V | 8A | 17.8 mOhm @ 8A, 10V | 4V @ 50µA | 36nC @ 10V | 1330pF @ 30V | |||
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41,640
Spedisce oggi + trasporto libero durante la notte
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Infineon Technologies | MOSFET 2N-CH 60V 8A 8-SOIC | HEXFET® | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 60V | 8A | 17.8 mOhm @ 8A, 10V | 4V @ 50µA | 36nC @ 10V | 1330pF @ 30V | |||
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67,240
Spedisce oggi + trasporto libero durante la notte
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Infineon Technologies | MOSFET 2N-CH 60V 8A 8-SOIC | HEXFET® | Not For New Designs | Tube | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 60V | 8A | 17.8 mOhm @ 8A, 10V | 4V @ 50µA | 36nC @ 10V | 1330pF @ 30V |
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