4 prodotti
IMMAGINE PARTE N. PREZZO QUANTITÀ AZIONE PRODUZIONE DESCRIZIONE Series Part Status Packaging Operating Temperature Mounting Type Package / Case Power - Max Supplier Device Package FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
SI4500BDY-T1-E3
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RFQ
51,500
Spedisce oggi + trasporto libero durante la notte
Vishay Siliconix MOSFET N/P-CH 20V 6.6A 8SOIC TrenchFET® Obsolete Digi-Reel® -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 1.3W 8-SO N and P-Channel, Common Drain Logic Level Gate 20V 6.6A, 3.8A 20 mOhm @ 9.1A, 4.5V 1.5V @ 250µA 17nC @ 4.5V -
SI4500BDY-T1-E3
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RFQ
54,920
Spedisce oggi + trasporto libero durante la notte
Vishay Siliconix MOSFET N/P-CH 20V 6.6A 8SOIC TrenchFET® Obsolete Cut Tape (CT) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 1.3W 8-SO N and P-Channel, Common Drain Logic Level Gate 20V 6.6A, 3.8A 20 mOhm @ 9.1A, 4.5V 1.5V @ 250µA 17nC @ 4.5V -
SI4500BDY-T1-GE3
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RFQ
67,620
Spedisce oggi + trasporto libero durante la notte
Vishay Siliconix MOSFET N/P-CH 20V 6.6A 8-SOIC TrenchFET® Obsolete Digi-Reel® -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 1.3W 8-SO N and P-Channel, Common Drain Logic Level Gate 20V 6.6A, 3.8A 20 mOhm @ 9.1A, 4.5V 1.5V @ 250µA 17nC @ 4.5V -
SI4500BDY-T1-GE3
ASSICURATI QUOTE
RFQ
68,140
Spedisce oggi + trasporto libero durante la notte
Vishay Siliconix MOSFET N/P-CH 20V 6.6A 8-SOIC TrenchFET® Obsolete Cut Tape (CT) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 1.3W 8-SO N and P-Channel, Common Drain Logic Level Gate 20V 6.6A, 3.8A 20 mOhm @ 9.1A, 4.5V 1.5V @ 250µA 17nC @ 4.5V -
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