4 prodotti
IMMAGINE PARTE N. PREZZO QUANTITÀ AZIONE PRODUZIONE DESCRIZIONE Series Part Status Packaging Operating Temperature Mounting Type Package / Case Power - Max Supplier Device Package FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
SI4330DY-T1-E3
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RFQ
19,920
Spedisce oggi + trasporto libero durante la notte
Vishay Siliconix MOSFET 2N-CH 30V 6.6A 8-SOIC TrenchFET® Obsolete Digi-Reel® -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 1.1W 8-SO 2 N-Channel (Dual) Logic Level Gate 30V 6.6A 16.5 mOhm @ 8.7A, 10V 3V @ 250µA 20nC @ 4.5V -
SI4330DY-T1-E3
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RFQ
67,600
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Vishay Siliconix MOSFET 2N-CH 30V 6.6A 8-SOIC TrenchFET® Obsolete Cut Tape (CT) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 1.1W 8-SO 2 N-Channel (Dual) Logic Level Gate 30V 6.6A 16.5 mOhm @ 8.7A, 10V 3V @ 250µA 20nC @ 4.5V -
SI4330DY-T1-E3
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RFQ
37,420
Spedisce oggi + trasporto libero durante la notte
Vishay Siliconix MOSFET 2N-CH 30V 6.6A 8-SOIC TrenchFET® Obsolete Tape & Reel (TR) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 1.1W 8-SO 2 N-Channel (Dual) Logic Level Gate 30V 6.6A 16.5 mOhm @ 8.7A, 10V 3V @ 250µA 20nC @ 4.5V -
SI4330DY-T1-GE3
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RFQ
21,780
Spedisce oggi + trasporto libero durante la notte
Vishay Siliconix MOSFET 2N-CH 30V 6.6A 8-SOIC TrenchFET® Obsolete Tape & Reel (TR) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 1.1W 8-SO 2 N-Channel (Dual) Logic Level Gate 30V 6.6A 16.5 mOhm @ 8.7A, 10V 3V @ 250µA 20nC @ 4.5V -
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