- Part Status :
- Current - Continuous Drain (Id) @ 25°C :
- Filtri applicati :
4 prodotti
| IMMAGINE | PARTE N. | PREZZO | QUANTITÀ | AZIONE | PRODUZIONE | DESCRIZIONE | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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ASSICURATI QUOTE |
79,060
Spedisce oggi + trasporto libero durante la notte
|
EPC | TRANS GAN 2N-CH 80V BUMPED DIE | eGaN® | Discontinued at Digi-Key | Bulk | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 9.5A, 38A | 14.5 mOhm @ 20A, 5V | 2.5V @ 2.5mA | 2.5nC @ 5V | 300pF @ 40V | ||
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ASSICURATI QUOTE |
27,700
Spedisce oggi + trasporto libero durante la notte
|
EPC | MOSFET 2NCH 80V 9.5A DIE | eGaN® | Active | Digi-Reel® | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 9.5A | 14.5 mOhm @ 20A, 5V | 2.5V @ 2.5mA | 2.5nC @ 5V | 300pF @ 40V | ||
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14,160
Spedisce oggi + trasporto libero durante la notte
|
EPC | MOSFET 2NCH 80V 9.5A DIE | eGaN® | Active | Cut Tape (CT) | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 9.5A | 14.5 mOhm @ 20A, 5V | 2.5V @ 2.5mA | 2.5nC @ 5V | 300pF @ 40V | |||
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20,160
Spedisce oggi + trasporto libero durante la notte
|
EPC | MOSFET 2NCH 80V 9.5A DIE | eGaN® | Active | Tape & Reel (TR) | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 9.5A | 14.5 mOhm @ 20A, 5V | 2.5V @ 2.5mA | 2.5nC @ 5V | 300pF @ 40V |
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