- Produzione :
- Series :
- Packaging :
- FET Feature :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Filtri applicati :
3 prodotti
| IMMAGINE | PARTE N. | PREZZO | QUANTITÀ | AZIONE | PRODUZIONE | DESCRIZIONE | Series | Part Status | Packaging | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ASSICURATI QUOTE |
62,880
Spedisce oggi + trasporto libero durante la notte
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Infineon Technologies | MOSFET N/P-CH 20V 3A/2.5A 8-SOIC | HEXFET® | Obsolete | Tube | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | N and P-Channel | Standard | 20V | 3A, 2.5A | 125 mOhm @ 1A, 10V | 1V @ 250µA | 25nC @ 10V | 300pF @ 15V | ||
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ASSICURATI QUOTE |
70,400
Spedisce oggi + trasporto libero durante la notte
|
ON Semiconductor | MOSFET N+P 20V 2.5A 8-SOIC | - | Obsolete | Cut Tape (CT) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 900mW | 8-SO | N and P-Channel | Logic Level Gate | 20V | 3A, 2.5A | 125 mOhm @ 1A, 10V | - | 27nC @ 10V | 525pF @ 10V | ||
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ASSICURATI QUOTE |
56,960
Spedisce oggi + trasporto libero durante la notte
|
ON Semiconductor | MOSFET N+P 20V 2.5A 8-SOIC | - | Obsolete | Tape & Reel (TR) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 900mW | 8-SO | N and P-Channel | Logic Level Gate | 20V | 3A, 2.5A | 125 mOhm @ 1A, 10V | - | 27nC @ 10V | 525pF @ 10V |
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