3 prodotti
IMMAGINE PARTE N. PREZZO QUANTITÀ AZIONE PRODUZIONE DESCRIZIONE Series Part Status Packaging Operating Temperature Mounting Type Package / Case Power - Max Supplier Device Package FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
PMDPB58UPE,115
ASSICURATI QUOTE
RFQ
13,400
Spedisce oggi + trasporto libero durante la notte
Nexperia USA Inc. MOSFET 2P-CH 20V 3.6A HUSON6 - Active Digi-Reel® -55°C ~ 150°C (TJ) Surface Mount 6-UDFN Exposed Pad 515mW DFN2020-6 2 P-Channel (Dual) Logic Level Gate 20V 3.6A 67 mOhm @ 2A, 4.5V 950mV @ 250µA 9.5nC @ 4.5V 804pF @ 10V
PMDPB58UPE,115
Per unità
$0.28
RFQ
65,760
Spedisce oggi + trasporto libero durante la notte
Nexperia USA Inc. MOSFET 2P-CH 20V 3.6A HUSON6 - Active Cut Tape (CT) -55°C ~ 150°C (TJ) Surface Mount 6-UDFN Exposed Pad 515mW DFN2020-6 2 P-Channel (Dual) Logic Level Gate 20V 3.6A 67 mOhm @ 2A, 4.5V 950mV @ 250µA 9.5nC @ 4.5V 804pF @ 10V
PMDPB58UPE,115
Per unità
$0.08
RFQ
57,360
Spedisce oggi + trasporto libero durante la notte
Nexperia USA Inc. MOSFET 2P-CH 20V 3.6A HUSON6 - Active Tape & Reel (TR) -55°C ~ 150°C (TJ) Surface Mount 6-UDFN Exposed Pad 515mW DFN2020-6 2 P-Channel (Dual) Logic Level Gate 20V 3.6A 67 mOhm @ 2A, 4.5V 950mV @ 250µA 9.5nC @ 4.5V 804pF @ 10V
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