- Part Status :
4 prodotti
| IMMAGINE | PARTE N. | PREZZO | QUANTITÀ | AZIONE | PRODUZIONE | DESCRIZIONE | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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ASSICURATI QUOTE |
54,760
Spedisce oggi + trasporto libero durante la notte
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Infineon Technologies | MOSFET 2N-CH 30V 9.1A/11A 8SOIC | HEXFET® | Discontinued at Digi-Key | Tube | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 30V | 9.1A, 11A | 16.4 mOhm @ 9.1A, 10V | 2.35V @ 25µA | 10nC @ 4.5V | 850pF @ 15V | ||
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ASSICURATI QUOTE |
23,200
Spedisce oggi + trasporto libero durante la notte
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Infineon Technologies | MOSFET 2N-CH 30V 9.1A/11A 8-SOIC | HEXFET® | Active | Digi-Reel® | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 30V | 9.1A, 11A | 16.4 mOhm @ 9.1A, 10V | 2.35V @ 25µA | 10nC @ 4.5V | 850pF @ 15V | ||
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51,340
Spedisce oggi + trasporto libero durante la notte
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Infineon Technologies | MOSFET 2N-CH 30V 9.1A/11A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 30V | 9.1A, 11A | 16.4 mOhm @ 9.1A, 10V | 2.35V @ 25µA | 10nC @ 4.5V | 850pF @ 15V | |||
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57,640
Spedisce oggi + trasporto libero durante la notte
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Infineon Technologies | MOSFET 2N-CH 30V 9.1A/11A 8-SOIC | HEXFET® | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 30V | 9.1A, 11A | 16.4 mOhm @ 9.1A, 10V | 2.35V @ 25µA | 10nC @ 4.5V | 850pF @ 15V |
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