4 prodotti
IMMAGINE PARTE N. PREZZO QUANTITÀ AZIONE PRODUZIONE DESCRIZIONE Series Part Status Packaging Operating Temperature Mounting Type Package / Case Power - Max Supplier Device Package FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
IRF7910PBF
ASSICURATI QUOTE
RFQ
28,500
Spedisce oggi + trasporto libero durante la notte
Infineon Technologies MOSFET 2N-CH 12V 10A 8-SOIC HEXFET® Discontinued at Digi-Key Tube -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 2W 8-SO 2 N-Channel (Dual) Logic Level Gate 12V 10A 15 mOhm @ 8A, 4.5V 2V @ 250µA 26nC @ 4.5V 1730pF @ 6V
IRF7910TRPBF
ASSICURATI QUOTE
RFQ
49,220
Spedisce oggi + trasporto libero durante la notte
Infineon Technologies MOSFET 2N-CH 12V 10A 8SOIC HEXFET® Active Digi-Reel® -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 2W 8-SO 2 N-Channel (Dual) Logic Level Gate 12V 10A 15 mOhm @ 8A, 4.5V 2V @ 250µA 26nC @ 4.5V 1730pF @ 6V
IRF7910TRPBF
Per unità
$0.80
RFQ
78,820
Spedisce oggi + trasporto libero durante la notte
Infineon Technologies MOSFET 2N-CH 12V 10A 8SOIC HEXFET® Active Cut Tape (CT) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 2W 8-SO 2 N-Channel (Dual) Logic Level Gate 12V 10A 15 mOhm @ 8A, 4.5V 2V @ 250µA 26nC @ 4.5V 1730pF @ 6V
IRF7910TRPBF
Per unità
$0.31
RFQ
17,240
Spedisce oggi + trasporto libero durante la notte
Infineon Technologies MOSFET 2N-CH 12V 10A 8SOIC HEXFET® Active Tape & Reel (TR) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 2W 8-SO 2 N-Channel (Dual) Logic Level Gate 12V 10A 15 mOhm @ 8A, 4.5V 2V @ 250µA 26nC @ 4.5V 1730pF @ 6V
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