3 prodotti
| IMMAGINE | PARTE N. | PREZZO | QUANTITÀ | AZIONE | PRODUZIONE | DESCRIZIONE | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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17,160
Spedisce oggi + trasporto libero durante la notte
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Microsemi Corporation | MOSFET 4N-CH 1000V 18A SP3 | - | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | 357W | 4 N-Channel (H-Bridge) | Standard | 1000V (1kV) | 18A | 540 mOhm @ 9A, 10V | 5V @ 2.5mA | 154nC @ 10V | 4350pF @ 25V | |||
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78,820
Spedisce oggi + trasporto libero durante la notte
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Microsemi Corporation | MOSFET 4N-CH 1000V 18A SP4 | POWER MOS 7® | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | 357W | 4 N-Channel (H-Bridge) | Standard | 1000V (1kV) | 18A | 540 mOhm @ 9A, 10V | 5V @ 2.5mA | 154nC @ 10V | 4350pF @ 25V | |||
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77,360
Spedisce oggi + trasporto libero durante la notte
|
Microsemi Corporation | MOSFET 4N-CH 1000V 18A SP4 | - | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | 357W | 4 N-Channel (H-Bridge) | Standard | 1000V (1kV) | 18A | 540 mOhm @ 9A, 10V | 5V @ 2.5mA | 154nC @ 10V | 4350pF @ 25V |
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